Manufacturing method of polysilicon load for static random access memory

ABSTRACT

A polysilicon load structure and its manufacturing method for static random access memory, comprising the steps of first providing a semiconductor substrate, and then forming a first insulating layer over the substrate. Next, a trench is etched out from the insulating layer forming a step structure. Thereafter, a polysilicon layer is formed over the first insulating layer, and then a global ion implantation operation is performed. Next, a photoresist layer is formed over the polysilicon layer, and then a connector pattern is defined using a microlithographic process. Thereafter, the polysilicon layer is anisotropically etched to form a spacer on the sidewall of the trench. Subsequently, a second ion implantation is performed to adjust the resistance of the connector. Finally, microlithographic and etching processes are used to remove the unwanted portions of the polysilicon spacer and exposing the polysilicon spacer structure and the polysilicon connector structure.

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to a structure and manufacturing method of a polysilicon load for static random access memory (SRAM). More particularly, the present invention relates to the structure and manufacturing method of a polysilicon load having a high resistance that can be used in a four-transistor SRAM (4T SRAM). In addition, some of the restrictions for miniaturizing memory cells using a conventional method can be eliminated.

2. Description of Related Art

FIG. 1 is a circuit layout diagram of a conventional four-transistor static random access memory (4T SRAM). As shown in FIG. 1, R₁ and R₂ are load resistors, and M₁ and M₂ are enhancement mode NMOS transistor s that function as drivers. Furthermore, there are enhancement mode NMOS transistors M₃ and M₄ that are used for accessing data contained in the SRAM. The gates of transistors M₃ and M₄ are controlled by a horizontal conducting line known as a word line (WL). The drain terminals of M₃ and M₄ are connected to transistor drivers M₁ and M₂, respectively. Therefore, the ON and OFF state of the transistors M₁ and M₂ are closely related to the switching states of transistors M₃ and M₄. The source terminals of M₃ and M₄ are each connected to a vertical conducting line known as a bit line (BL).

In general, a high resistance polysilicon line is used as a load resistor in a fourtransistor SRAM (4T SRAM). FIG. 2 is a top view of a conventional polysilicon line structure. A conventional polysilicon line is formed by first depositing a polysilicon film, and then adjusting the line resistance through an impurity implant. Subsequently, microlithographic and etching processes are used to obtain the necessary polysilicon line pattern 20 (including 20a and 20b). Thereafter, portions of line 20a and region within the line boundary 22 is implanted a second time using heavily concentrated impurities. The twice-implanted region becomes a connector 22a region and that the second implant is for lowering the resistance of the polysilicon line 20a. The remainder portions of the polysilicon line 20 now serves as a polysilicon load 20b. Therefore, resistance of polysilicon load 20b is largely determined by factors such as the quantity of implanted impurities during the first implant, thickness of the polysilicon film, the width W and the length L of the polysilicon load line 20b.

Conventionally, a high polysilicon load resistance can be obtained by methods such as lowering the thickness of polysilicon film, increasing the length of polysilicon load, or reducing the width of the polysilicon load. However, as SRAM cells are miniaturized further, a load having a sufficiently high resistance becomes harder to make using the conventional method described above. The main reason is that during subsequent thermal processing operations, highly concentrated impurities of the second implant within the connector will out-diffuse into the polysilicon load and resulting in a reduction in the final effective length of the polysilicon load. This presents a difficult problem for the conventional method when SRAM cells are further miniaturized in the future. Since the linear dimension of a polysilicon load is incapable of any more extension, and furthermore, reduction of polysilicon line width is still limited by the known processing techniques, therefore, the conventional method of forming a polysilicon load is a major drawback for future dimensional reduction of memory cells.

In light of the foregoing, there is a need in the art to provide an improved structure and manufacturing method for forming a polysilicon load.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to provide a high resistance polysilicon load structure and its manufacturing method for static random access memory that can minimize the drawbacks and difficulties of miniaturizing a memory cell in a conventional method.

To achieve these and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, the invention provides a static random access memory polysilicon load structure and its manufacturing method. The method comprises the steps of first providing a semiconductor substrate, and then forming a first insulating layer over the substrate. Next, a trench is etched out from the insulating layer forming a step structure. Thereafter, a polysilicon layer is formed over the first insulating layer, and then a global ion implantation operation is performed. Next, a photoresist layer is formed over the pclysilicon layer, and then a connector pattern is defined on the photoresist layer using a lithographic process. Thereafter, the polysilicon layer is anisotropically etched to form a spacer along the sidewall of the trench. Subsequently, the connector is implanted secondly to adjust resistance. Finally, lithographic and etching processes are used to remove the unwanted portions of the polysilicon spacer and exposing the polysilicon spacer structure and the polysilicon connector structure.

It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings,

FIG. 1 is a circuit layout diagram of a conventional four-transistor static random access memory (4T SRAM);

FIG. 2 is a top view of a conventional polysilicon line structure;

FIGS. 3A through 3E are cross-sectional views showing the progression of manufacturing steps in the fabrication of a polysilicon load in static random access memory according to one preferred embodiment of this invention; and

FIG. 4 is a top view showing various shapes of the polysilicon loads in static random access memory according to one preferred embodiment of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.

FIGS. 3A through 3E are cross-sectional views showing the progression of manufacturing steps in the fabrication of a polysilicon load in static random access memory according to one preferred embodiment of this invention.

First, as shown in FIG. 3A, a semiconductor substrate 30 having a device layer 32 already formed thereon is provided. The device layer includes various transistor devices or insulating structures between devices. Next, an insulating layer 34 having a thickness between 2000 Å to 5000 Å is formed over the device layer 32, and then a shallow trench 36 is etched out from the insulating layer 34 forming a step structure. The step has a depth of d and is preferably smaller than the thickness of the insulating layer 34. The desired load line is laid along the edge of the trench 36 in a subsequent operation.

Next, as shown in FIG. 3B, a polysilicon layer 38 is formed over the insulating layer 34 including the step structure of the trench as well. Subsequently, a first global ion implantation is performed implanting impurities into the polysilicon layer 38 and forming a lightly doped region.

Next, as shown in FIG. 3C, a first photoresist layer 40 is formed over the polysilicon layer 38, and then a connector pattern is defined on the photoresist layer 40 using a microlithographic process.

In the subsequent step, as shown in FIG. 3D, the polysilicon layer 38 is etched anisotropically to form a polysilicon spacer structure 42 on the sidewall of the trench using the first photoresist layer 40 as a mask. The polysilicon spacer structure 42 serves as a load.

Thereafter, as shown in FIG. 3E, the first photoresist layer 40 is removed to expose the residual polysilicon layer 38a. The residual polysilicon layer 38a is the connector, and the connector has a thickness of about 500 Å to 1500 Å. A second photoresist layer is then formed over the polysilicon layer 38, the insulating layer 34 and the polysilicon spacer structure 42. Thereafter, a pattern is formed on the second photoresist layer using a microlithographic process such that the connector layer 38a is exposed. A second ion implantation is performed to adjust the resistance of the connector layer 38a. The ionic concentration level used in the second implantation is preferably higher than the ionic concentration level in the first implantation. Therefore, the connector layer 38a is a heavily doped region. Subsequently, the second photoresist layer is removed exposing the polysilicon spacer structure 42 and the polysilicon connector structure 38a. Finally, microlithographic and etching processes are again used to remove the unwanted portions of the polysilicon spacer, thus completing the fabrication of a polysilicon load in the static random access memory of this invention.

FIG. 4 is a top view showing various shapes of polysilicon load in static random access memory according to one preferred embodiment of the invention. As shown in FIG. 4, polysilicon regions 38a are connector structures connected by spacers 42a. The spacers 42a function as loads. In addition to the linear structure as shown for spacer 42a, other shapes may also be employed as long as the total length of a polysilicon load line is increased, and hence increasing its resistance. For example, a sawtooth-shaped structure 42b and a winding extension structure 42c can both be implemented.

As a summary, the SRAM polysilicon load structure and manufacturing method of this invention has the following characteristics:

(1) The polysilicon load structure of this invention has a high resistance. Therefore, the invention solves the problem of impurity out-diffusion from connectors to

the loads in a conventional method that results in a lowering of load resistance.

This offers some benefits to the development of future generation of miniaturized SRAM cells.

(2) The polysilicon load of this invention has a spacer structure, and its cross-sectional area can be easily adjusted, for example, by adjusting the depth d of the trench 36, or by changing the thickness of poly-silicon layer 38. Therefore, through reducing the cross-sectional area, load resistance can be increased.

(3) The load structure of this invention can be fabricated into all kinds of planar shapes, so long as the total length of the polysilicon load is increased. For example, beside a linear shape, others such as a sawtooth shape or a winding extension can also be implemented.

It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents. 

What is claimed is:
 1. A method for manufacturing polysilicon loads of static random access memory, comprising the steps of:Providing a semiconductor substrate having a device layer already formed thereon; Forming an insulating layer over the device layer; Etching out a trench having a step structure in the insulating layer; Forming a polysilicon layer over the insulating layer and the trench; Performing a first global implantation of ions into the polysilicon layer; Forming a first photoresist layer over the polysilicon layer, and then defining a connector pattern on the photoresist layer using a microlithographic processing operation; Etching the polysilicon layer anisotropically to form a polysilicon spacer structure along the sidewall of the trench; Removing the first photoresist layer; Forming a second photoresist layer over the polysilicon spacer, and then using a microlithographic processing operation to make a pattern exposing the connector; Performing a second implantation of ions into the exposed polysilicon layer for adjusting the resistance of the connector; Removing the second photoresist layer to expose the polysilicon spacer and the connector structure; Forming a third photoresist layer and using a microlithographic processing operation to form a pattern on the photoresist layer covering portions of the polysilicon spacer structure and the connector structure; Dry etching to remove the unwanted portions of the polysilicon spacer; and Removing the third photoresist layer.
 2. The method of claim 1, wherein the insulating layer has a thickness of about 2000 Å to 5000 Å.
 3. The method of claim 1, wherein the polysilicon layer has a thickness of about 500 Å to 1500 Å.
 4. The method of claim 1, wherein the depth of the trench is preferably smaller than the thickness of the polysilicon layer.
 5. The method of claim 1, wherein the level of concentration of ions in the first global ion implantation is preferably smaller than the level of concentration in the second implantation.
 6. The method of claim 1, wherein the step of forming the polysilicon spacer includes shaping the polysilicon spacer into a structure having a linear shape when viewed from the top.
 7. The method of claim 1, wherein the step of forming the polysilicon spacer includes shaping the polysilicon spacer into a structure having a sawtooth shape when viewed from the top.
 8. The method of claim 1, wherein the step of forming the polysilicon spacer includes shaping the polysilicon spacer into a structure having a winding extension when viewed from the top. 